| PART |
Description |
Maker |
| TDA8920 TDA8920J TDA8920TH |
2x50 W class-D power amplifier(2x50W D绫诲???????澶у?)
2 x 50 W class-D power amplifier 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 50 W class-D power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| APA2606NAI-TRG |
2.8W Stereo Class-D Audio Power Amplifier and Class AB Headphone Driver
|
Anpec Electronics Corop...
|
| APA2603AJI-TRG APA2603AJI-TUG APA2603AQAI-TRG APA2 |
2.8W Stereo Class-D Audio Power Amplifier and Class AB Headphone Driver
|
Anpec Electronics Coropration
|
| MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| VAM40 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | SOT-121VAR
40 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz
|
GHZTECH[GHz Technology]
|
| IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET?/a> Power MOSFETs Q-Class
HiPerFET⑩ Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| C0603C151G5GACTU |
SMD Comm C0G, Ceramic, 150 pF, 2%, 50 V, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I, 0603
|
Kemet Corporation
|
| STK433-290-E |
Thick-Film Hybrid IC 3-channel class AB audio power IC 3-channel class AB audio power IC
|
Sanyo Semicon Device
|
| C0603C151JAGACTU |
SMD Comm C0G, Ceramic, 150 pF, 5%, 250 VDC, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I, 0603
|
Kemet Corporation
|
|
